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A finite volume method with interface capacitance insertion on quad-tree meshes for impedance analysis in microfluidic devices

ORCID
0009-0006-5964-6115
Affiliation/Institute
Institut für CMOS Design
Rother, Milan;
ORCID
0000-0003-0629-8357
Affiliation/Institute
Institut für CMOS Design
Bakhchova, Liubov;
ORCID
0000-0003-3450-8745
Affiliation/Institute
Institut für CMOS Design
Issakov, Vadim

In this work, we introduce an enhanced Finite Volume Method (FVM) designed for the quasi-electrostatic analysis of microfluidic devices in the frequency domain. Addressing the critical need for accurate modeling of double-layer capacitances at electrode-electrolyte interfaces, we propose a novel approach for interface capacitance insertion. This is pivotal for impedance spectroscopy applications in microfluidic devices where such interfaces are present. By leveraging Quad-Tree meshing, our method adeptly manages the substantial geometrical scale variations inherent in microfluidic channels. This integration allows for efficient computation of multi-port impedances, facilitating the comprehensive evaluation of electrical parameters within these devices. Our approach not only bridges the gap left by traditional FVM and commercial software but also provides a robust framework for design space exploration and optimization of microfluidic structures and electrode geometries. The effectiveness of the proposed method is demonstrated through numerical convergence analysis and practical application to a microfluidic channel cross-section for measurement of transepithelial electrical resistance (TEER), showcasing its potential for advancing biomedical device simulations.

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