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Processing and Characterization of Monolithic Passive-Matrix GaN-Based MicroLED Arrays With Pixel Sizes From 5 to 50 µm

ORCID
0000-0002-7520-6615
Affiliation/Institute
Institute of Semiconductor Technology, Hans-Sommer-Str. 66, 38106 Braunschweig
Bornemann, Steffen;
ORCID
0000-0002-3087-3502
Affiliation/Institute
Institute of Semiconductor Technology, Hans-Sommer-Str. 66, 38106 Braunschweig
Wolter, Stefan

MicroLED arrays with the capability of switching each pixel separately with high frequency can serve as structured micro-illumination light engines for applications in sensing, optogenetics, microscopy and many others. We describe a scalable chip process chain for the fabrication of passive-matrix microLED arrays, which were integrated with PCB-based driving electronics. The arrays were produced by deep-etching of conventional planar LED structures on sapphire, followed by filling and planarization steps. The pixel resolution lies in the range of 254 to 2540 pixels-per-inch (ppi), the arrays consist of 32 x 32 pixels. Optical output powers up to 50 µW per pixel were measured. In comparison to CMOS-based approaches, the presented technology is a simplified strategy to produce microLED arrays with high pixel counts.

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