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Processing and characterization of monolithic passive-matrix GaN-based microLED arrays with pixel sizes from 5 to 50 µm

ORCID
0000-0002-7520-6615
Affiliation/Institute
Institute of Semiconductor Technology, Technische Universität Braunschweig
Bornemann, Steffen;
GND
1231969156
ORCID
0000-0002-9205-342X
Affiliation/Institute
Institute of Semiconductor Technology, Technische Universität Braunschweig
Gülink, Jan; Moro, Victor; Canals, Joan;
GND
1231968540
ORCID
0000-0002-3087-3502
Affiliation/Institute
Institute of Semiconductor Technology, Technische Universität Braunschweig
Wolter, Stefan;
ORCID
0000-0003-4000-8050
Affiliation/Institute
Institute of Semiconductor Technology, Technische Universität Braunschweig
Schöttler, Georg;
GND
1232418404
ORCID
0000-0003-2543-7682
Affiliation/Institute
Institute of Semiconductor Technology, Technische Universität Braunschweig
Bezshlyakh, Daria; Prades, Joan Daniel; Dieguez, Angel;
GND
142645664
ORCID
0000-0002-2724-1686
Affiliation/Institute
Institute of Semiconductor Technology, Technische Universität Braunschweig
Waag, Andreas

MicroLED arrays with the capability of switching each pixel separately with high frequency can serve as structured micro-illumination light engines for applications in sensing, optogenetics, microscopy and many others. We describe a scalable chip process chain for the fabrication of passive-matrix microLED arrays, which were integrated with PCB-based driving electronics. The arrays were produced by deep-etching of conventional planar LED structures on sapphire, followed by filling and planarization steps. The pixel resolution lies in the range of 254 to 2540 pixels-per-inch (ppi), the arrays consist of 32 x 32 pixels. Optical output powers up to 50 μW per pixel were measured. In comparison to CMOS-based approaches, the presented technology is a simplified strategy to producemicroLED arrays with high pixel counts.

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