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Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN micro-LEDs Down to the Submicron Scale

Affiliation/Institute
Institute of Semiconductor Technology, TU Braunschweig
Stefan Wolter;
Affiliation/Institute
Institute of Semiconductor Technology, TU Braunschweig
Hendrik Spende

Besides high-power light-emitting diodes with dimensions in the range of mm, micro-LEDs are increasingly gaining interest today, motivated by the future applications of micro-LEDs in augmented reality displays or for nanometrology and sensor technology. A key aspect of this miniaturization is the influence of the structure size, more precisely the surface region, on the electrical and optical properties of micro-LEDs, as the surface-to-volume ratio increases drastically with decreasing size. With this in mind, this data set was generated to investigate the effect of size on the electro-optical properties. The data set contains current-voltage (IV) and electroluminescence (EL) measurements and also secondary electron images of the investigated structures.

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