Über die Halbleitereigenschaften intermetallischer Verbindungen (CdSb)
The well known stoichiometric intermetallic compounds of binary systems, as f.i. Au-Cu, show minima of electrical resistivity connected with their high crystallographic order. Such compounds reach approximately the resistivity of the pure components. In contradiction to these older statements the authors report about new experiments with other binary alloys, f.ex. Cd-Sb which show a sharp increase of resistivity by 4 to 5 orders of magnitude when stoichiometric composition is being reached. The new measurements of the temperature dependence of resistivity between 10° to 700° abs. prove in accordance with the Halleffect, the magnetic increase of resistance, the thermoelectric force and the rectifying properties that these intermetallic compounds behave as veritable intrinsic resp. extrinsic semiconductors. Pure stoichiometric CdSb can reach [rho]293°=2,4 Ohm x cm. A theoretical explanation of these experimental statements is given in terms of the electron theory of metals. The authors point out how the CdSb with its known rhombic crystal structure becomes semiconductive by completion of the seventh Brillouinzone. In conclusion the authors discuss the possibilities of technical use of such intermetallic semiconducting compounds instead of Ge and Si in diodes or transistors.